Gate-Dielectric Engineering with an Ultrathin Silicon Oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories.
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| Title: | Gate-Dielectric Engineering with an Ultrathin Silicon Oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories. |
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| Authors: | Athena FF; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Hartanto J; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Passlack M; Corporate Research, Taiwan Semiconductor Manufacturing Company, Ltd., San Jose, California 95134, United States., Evans JC; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Qin J; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Dede D; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Jana K; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Liu S; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Peña T; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Pop E; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Pitner G; Corporate Research, Taiwan Semiconductor Manufacturing Company, Ltd., San Jose, California 95134, United States., Radu IP; Corporate Research, Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu 300-096, Taiwan., McIntyre PC; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Wong HP; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States. |
| Source: | Nano letters [Nano Lett] 2026 Mar 18; Vol. 26 (10), pp. 3338-3346. Date of Electronic Publication: 2026 Feb 23. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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