Low breakdown field and high ionization index in ReSe2 avalanche field-effect transistors.

Saved in:
Bibliographic Details
Title: Low breakdown field and high ionization index in ReSe2 avalanche field-effect transistors.
Authors: Zhang J; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore., Wang J; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore., Liu D; School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Shenzhen, China., Andreev M; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore., Peng Z; Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China., Wei J; Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China., Bozcali AE; Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore., Jain S; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore., Zheng H; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore., Avsar A; Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore., Zhang M; School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Shenzhen, China., Chan M; Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China., Ang KW; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore. eleakw@nus.edu.sg.
Source: Nature communications [Nat Commun] 2026 Feb 26; Vol. 17 (1). Date of Electronic Publication: 2026 Feb 26.
Publication Type: Journal Article
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:2041-1723
DOI:10.1038/s41467-026-69994-w