APA (7th ed.) Citation

J, Z., J, W., D, L., M, A., Z, P., J, W., . . . KW, A. (2026). Low breakdown field and high ionization index in ReSe2 avalanche field-effect transistors. Nature communications, 17(1), . https://doi.org/10.1038/s41467-026-69994-w

Chicago Style (17th ed.) Citation

J, Zhang, et al. "Low Breakdown Field and High Ionization Index in ReSe2 Avalanche Field-effect Transistors." Nature Communications 17, no. 1 (2026). https://doi.org/10.1038/s41467-026-69994-w.

MLA (9th ed.) Citation

J, Zhang, et al. "Low Breakdown Field and High Ionization Index in ReSe2 Avalanche Field-effect Transistors." Nature Communications, vol. 17, no. 1, 2026, https://doi.org/10.1038/s41467-026-69994-w.