Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride.

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Title: Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride.
Authors: Wang J; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Lee H; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Kim J; Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea., Yeo HU; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Yoon CH; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Yoo MS; 2D Device Laboratory, Samsung Advanced Institute of Technology (SAIT), Suwon, Republic of Korea., Noh J; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Jang S; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Han JH; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Han J; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Park J; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Jin YH; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Han H; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Park K; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Suh J; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Yoon TS; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Song S; Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea.; Center for 2D Quantum Heterostructures (2DQH), Institute for Basic Science (IBS), Suwon, Republic of Korea., Seol M; 2D Device Laboratory, Samsung Advanced Institute of Technology (SAIT), Suwon, Republic of Korea., Hwang C; Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, Republic of Korea., Shin HJ; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Lee Z; Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea., Jeong C; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Kwon SY; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Source: Small (Weinheim an der Bergstrasse, Germany) [Small] 2026 May; Vol. 22 (26), pp. e13245. Date of Electronic Publication: 2026 Mar 15.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1613-6829
DOI:10.1002/smll.202513245