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Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride.

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Title: Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride.
Authors: Wang J; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Lee H; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Kim J; Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea., Yeo HU; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Yoon CH; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Yoo MS; 2D Device Laboratory, Samsung Advanced Institute of Technology (SAIT), Suwon, Republic of Korea., Noh J; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Jang S; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Han JH; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Han J; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Park J; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Jin YH; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Han H; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Park K; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Suh J; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Yoon TS; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Song S; Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea.; Center for 2D Quantum Heterostructures (2DQH), Institute for Basic Science (IBS), Suwon, Republic of Korea., Seol M; 2D Device Laboratory, Samsung Advanced Institute of Technology (SAIT), Suwon, Republic of Korea., Hwang C; Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, Republic of Korea., Shin HJ; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Lee Z; Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea., Jeong C; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea., Kwon SY; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Source: Small (Weinheim an der Bergstrasse, Germany) [Small] 2026 May; Vol. 22 (26), pp. e13245. Date of Electronic Publication: 2026 Mar 15.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: MEDLINE; PubMed not MEDLINE
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  Data: Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride.
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  Data: <searchLink fieldCode="AU" term="%22Wang+J%22">Wang J</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+H%22">Lee H</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+J%22">Kim J</searchLink>; Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yeo+HU%22">Yeo HU</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yoon+CH%22">Yoon CH</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yoo+MS%22">Yoo MS</searchLink>; 2D Device Laboratory, Samsung Advanced Institute of Technology (SAIT), Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Noh+J%22">Noh J</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jang+S%22">Jang S</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Han+JH%22">Han JH</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Han+J%22">Han J</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Park+J%22">Park J</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jin+YH%22">Jin YH</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Han+H%22">Han H</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Park+K%22">Park K</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Suh+J%22">Suh J</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yoon+TS%22">Yoon TS</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Song+S%22">Song S</searchLink>; Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea.; Center for 2D Quantum Heterostructures (2DQH), Institute for Basic Science (IBS), Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Seol+M%22">Seol M</searchLink>; 2D Device Laboratory, Samsung Advanced Institute of Technology (SAIT), Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hwang+C%22">Hwang C</searchLink>; Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Shin+HJ%22">Shin HJ</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+Z%22">Lee Z</searchLink>; Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jeong+C%22">Jeong C</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kwon+SY%22">Kwon SY</searchLink>; Department of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%22101235338%22">Small (Weinheim an der Bergstrasse, Germany)</searchLink> [Small] 2026 May; Vol. 22 (26), pp. e13245. <i>Date of Electronic Publication: </i>2026 Mar 15.
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