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High-κ KBe2BO3F2 dielectric material with wide bandgap for two-dimensional electronics.

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Title: High-κ KBe2BO3F2 dielectric material with wide bandgap for two-dimensional electronics.
Authors: Xu Y; State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Liu K; State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Peng G; State Key Laboratory of Crystal Materials, Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, Tianjin University of Technology, Tianjin, China., Liu T; State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Sun L; School of Physics, Huazhong University of Science and Technology, Wuhan, China.; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China., Xiong X; School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing, China., Wu Y; School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing, China., Sun H; Institute of Physics, Chinese Academy of Sciences, Beijing, China., Bai X; Institute of Physics, Chinese Academy of Sciences, Beijing, China., Zhu Y; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China., Xiao Z; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China., Li H; State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Zhai T; State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China. zhaity@hust.edu.cn.
Source: Nature communications [Nat Commun] 2026 Mar 23; Vol. 17 (1). Date of Electronic Publication: 2026 Mar 23.
Publication Type: Journal Article
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: High-κ KBe<subscript>2</subscript>BO<subscript>3</subscript>F<subscript>2</subscript> dielectric material with wide bandgap for two-dimensional electronics.
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  Data: <searchLink fieldCode="AU" term="%22Xu+Y%22">Xu Y</searchLink>; State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China.<br /><searchLink fieldCode="AU" term="%22Liu+K%22">Liu K</searchLink>; State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China.<br /><searchLink fieldCode="AU" term="%22Peng+G%22">Peng G</searchLink>; State Key Laboratory of Crystal Materials, Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, Tianjin University of Technology, Tianjin, China.<br /><searchLink fieldCode="AU" term="%22Liu+T%22">Liu T</searchLink>; State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China.<br /><searchLink fieldCode="AU" term="%22Sun+L%22">Sun L</searchLink>; School of Physics, Huazhong University of Science and Technology, Wuhan, China.; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China.<br /><searchLink fieldCode="AU" term="%22Xiong+X%22">Xiong X</searchLink>; School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing, China.<br /><searchLink fieldCode="AU" term="%22Wu+Y%22">Wu Y</searchLink>; School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing, China.<br /><searchLink fieldCode="AU" term="%22Sun+H%22">Sun H</searchLink>; Institute of Physics, Chinese Academy of Sciences, Beijing, China.<br /><searchLink fieldCode="AU" term="%22Bai+X%22">Bai X</searchLink>; Institute of Physics, Chinese Academy of Sciences, Beijing, China.<br /><searchLink fieldCode="AU" term="%22Zhu+Y%22">Zhu Y</searchLink>; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China.<br /><searchLink fieldCode="AU" term="%22Xiao+Z%22">Xiao Z</searchLink>; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China.<br /><searchLink fieldCode="AU" term="%22Li+H%22">Li H</searchLink>; State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China.<br /><searchLink fieldCode="AU" term="%22Zhai+T%22">Zhai T</searchLink>; State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China. zhaity@hust.edu.cn.
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  Data: <searchLink fieldCode="JN" term="%22101528555%22">Nature communications</searchLink> [Nat Commun] 2026 Mar 23; Vol. 17 (1). <i>Date of Electronic Publication: </i>2026 Mar 23.
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