| Authors: |
Lin F; College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.; Hainan Provincial Key Laboratory of Laser Technology and Optoelectronic Functional Materials, Innovation Center of Hainan Academician Team, Haikou 571158, China.; Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China., Wu Q; State Key Laboratory on High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China., Luo W; College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.; Hainan Provincial Key Laboratory of Laser Technology and Optoelectronic Functional Materials, Innovation Center of Hainan Academician Team, Haikou 571158, China.; Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China., Lin Y; College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.; Hainan Provincial Key Laboratory of Laser Technology and Optoelectronic Functional Materials, Innovation Center of Hainan Academician Team, Haikou 571158, China.; Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China., Zheng Z; College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.; Hainan Provincial Key Laboratory of Laser Technology and Optoelectronic Functional Materials, Innovation Center of Hainan Academician Team, Haikou 571158, China.; Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China., Yuan M; College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.; Hainan Provincial Key Laboratory of Laser Technology and Optoelectronic Functional Materials, Innovation Center of Hainan Academician Team, Haikou 571158, China.; Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China., Zhang Q; College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.; Hainan Provincial Key Laboratory of Laser Technology and Optoelectronic Functional Materials, Innovation Center of Hainan Academician Team, Haikou 571158, China.; Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China., Hu M; College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.; Hainan Provincial Key Laboratory of Laser Technology and Optoelectronic Functional Materials, Innovation Center of Hainan Academician Team, Haikou 571158, China.; Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China., Xu D; College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.; Hainan Provincial Key Laboratory of Laser Technology and Optoelectronic Functional Materials, Innovation Center of Hainan Academician Team, Haikou 571158, China.; Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China., Liu G; College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.; Hainan Provincial Key Laboratory of Laser Technology and Optoelectronic Functional Materials, Innovation Center of Hainan Academician Team, Haikou 571158, China.; Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China., Qu Y; College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.; Hainan Provincial Key Laboratory of Laser Technology and Optoelectronic Functional Materials, Innovation Center of Hainan Academician Team, Haikou 571158, China.; Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China. |
