| Authors: |
Pan YY; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Hsu CH; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Tseng R; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Wang ST; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chang YC; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chen SC; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Kimura T; Department of Physics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan., Lan YW; Department of Physics, National Taiwan Normal University, Taipei 116077, Taiwan., Lien DH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan. |