APA (7th ed.) Citation

YY, P., CH, H., R, T., ST, W., YC, C., SC, C., . . . DH, L. (2026). Reversible Thickness Engineering in Amorphous In2O3 Transistors. Nano letters, 26(19), 6270. https://doi.org/10.1021/acs.nanolett.5c06228

Chicago Style (17th ed.) Citation

YY, Pan, Hsu CH, Tseng R, Wang ST, Chang YC, Chen SC, Kimura T, Lan YW, and Lien DH. "Reversible Thickness Engineering in Amorphous In2O3 Transistors." Nano Letters 26, no. 19 (2026): 6270. https://doi.org/10.1021/acs.nanolett.5c06228.

MLA (9th ed.) Citation

YY, Pan, et al. "Reversible Thickness Engineering in Amorphous In2O3 Transistors." Nano Letters, vol. 26, no. 19, 2026, p. 6270, https://doi.org/10.1021/acs.nanolett.5c06228.