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Reversible Thickness Engineering in Amorphous In2O3 Transistors.

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Title: Reversible Thickness Engineering in Amorphous In2O3 Transistors.
Authors: Pan YY; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Hsu CH; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Tseng R; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Wang ST; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chang YC; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chen SC; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Kimura T; Department of Physics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan., Lan YW; Department of Physics, National Taiwan Normal University, Taipei 116077, Taiwan., Lien DH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Source: Nano letters [Nano Lett] 2026 May 20; Vol. 26 (19), pp. 6270-6277. Date of Electronic Publication: 2026 Apr 13.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Reversible Thickness Engineering in Amorphous In<subscript>2</subscript>O<subscript>3</subscript> Transistors.
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  Data: <searchLink fieldCode="AU" term="%22Pan+YY%22">Pan YY</searchLink>; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Hsu+CH%22">Hsu CH</searchLink>; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Tseng+R%22">Tseng R</searchLink>; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Wang+ST%22">Wang ST</searchLink>; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Chang+YC%22">Chang YC</searchLink>; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Chen+SC%22">Chen SC</searchLink>; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Kimura+T%22">Kimura T</searchLink>; Department of Physics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan.<br /><searchLink fieldCode="AU" term="%22Lan+YW%22">Lan YW</searchLink>; Department of Physics, National Taiwan Normal University, Taipei 116077, Taiwan.<br /><searchLink fieldCode="AU" term="%22Lien+DH%22">Lien DH</searchLink>; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
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  Data: <searchLink fieldCode="JN" term="%22101088070%22">Nano letters</searchLink> [Nano Lett] 2026 May 20; Vol. 26 (19), pp. 6270-6277. <i>Date of Electronic Publication: </i>2026 Apr 13.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101088070 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1530-6992 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2215306984%22">15306984 </searchLink><i>NLM ISO Abbreviation: </i>Nano Lett <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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        Value: 10.1021/acs.nanolett.5c06228
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      – Code: eng
        Text: English
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              M: 05
              Text: 2026 May 20
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              Y: 2026
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