Reversible Thickness Engineering in Amorphous In2O3 Transistors.
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| Title: | Reversible Thickness Engineering in Amorphous In |
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| Authors: | Pan YY; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Hsu CH; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Tseng R; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Wang ST; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chang YC; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chen SC; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Kimura T; Department of Physics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan., Lan YW; Department of Physics, National Taiwan Normal University, Taipei 116077, Taiwan., Lien DH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan. |
| Source: | Nano letters [Nano Lett] 2026 May 20; Vol. 26 (19), pp. 6270-6277. Date of Electronic Publication: 2026 Apr 13. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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