| Authors: |
Gong FH; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Institute of Physics, Chinese Academy of Sciences, Beijing, China., Tang L; Department of Functional Nanomaterials and Devices, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China., Chen YT; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Institute of Physics, Chinese Academy of Sciences, Beijing, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China., Zhu J; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China., Wang X; Department of Functional Nanomaterials and Devices, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China., Wang JH; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China., Yin SS; Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China.; School of Physical Science and Technology, ShanghaiTech University, Shanghai, China., Liu SZ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China., Li XL; Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China., Liu XR; School of Physical Science and Technology, ShanghaiTech University, Shanghai, China., Wang YJ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China., Tang YL; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China., Hong Z; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China., Liang QJ; Department of Functional Nanomaterials and Devices, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China., Zhu YL; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China.; School of Materials Science and Engineering, Hunan University of Science and Technology, Xiangtan, China., Ma XL; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Institute of Physics, Chinese Academy of Sciences, Beijing, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China.; Quantum Science Center of Guangdong-HongKong-Macau Greater Bay Area, Shenzhen, China.; State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Lanzhou, China. |
