Freestanding Flexible Vortex Tubes Integrated With Ferroelectric Transistor.
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| Title: | Freestanding Flexible Vortex Tubes Integrated With Ferroelectric Transistor. |
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| Authors: | Gong FH; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Institute of Physics, Chinese Academy of Sciences, Beijing, China., Tang L; Department of Functional Nanomaterials and Devices, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China., Chen YT; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Institute of Physics, Chinese Academy of Sciences, Beijing, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China., Zhu J; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China., Wang X; Department of Functional Nanomaterials and Devices, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China., Wang JH; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China., Yin SS; Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China.; School of Physical Science and Technology, ShanghaiTech University, Shanghai, China., Liu SZ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China., Li XL; Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China., Liu XR; School of Physical Science and Technology, ShanghaiTech University, Shanghai, China., Wang YJ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China., Tang YL; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China., Hong Z; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China., Liang QJ; Department of Functional Nanomaterials and Devices, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China., Zhu YL; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China.; School of Materials Science and Engineering, Hunan University of Science and Technology, Xiangtan, China., Ma XL; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Institute of Physics, Chinese Academy of Sciences, Beijing, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China.; Quantum Science Center of Guangdong-HongKong-Macau Greater Bay Area, Shenzhen, China.; State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Lanzhou, China. |
| Source: | Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2026 Jun; Vol. 38 (32), pp. e22292. Date of Electronic Publication: 2026 May 02. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 42068198 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Freestanding Flexible Vortex Tubes Integrated With Ferroelectric Transistor. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Gong+FH%22">Gong FH</searchLink>; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Institute of Physics, Chinese Academy of Sciences, Beijing, China.<br /><searchLink fieldCode="AU" term="%22Tang+L%22">Tang L</searchLink>; Department of Functional Nanomaterials and Devices, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China.<br /><searchLink fieldCode="AU" term="%22Chen+YT%22">Chen YT</searchLink>; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Institute of Physics, Chinese Academy of Sciences, Beijing, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China.<br /><searchLink fieldCode="AU" term="%22Zhu+J%22">Zhu J</searchLink>; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China.<br /><searchLink fieldCode="AU" term="%22Wang+X%22">Wang X</searchLink>; Department of Functional Nanomaterials and Devices, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.<br /><searchLink fieldCode="AU" term="%22Wang+JH%22">Wang JH</searchLink>; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China.<br /><searchLink fieldCode="AU" term="%22Yin+SS%22">Yin SS</searchLink>; Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China.; School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Liu+SZ%22">Liu SZ</searchLink>; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China.<br /><searchLink fieldCode="AU" term="%22Li+XL%22">Li XL</searchLink>; Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Liu+XR%22">Liu XR</searchLink>; School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Wang+YJ%22">Wang YJ</searchLink>; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China.<br /><searchLink fieldCode="AU" term="%22Tang+YL%22">Tang YL</searchLink>; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China.<br /><searchLink fieldCode="AU" term="%22Hong+Z%22">Hong Z</searchLink>; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China.<br /><searchLink fieldCode="AU" term="%22Liang+QJ%22">Liang QJ</searchLink>; Department of Functional Nanomaterials and Devices, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China.<br /><searchLink fieldCode="AU" term="%22Zhu+YL%22">Zhu YL</searchLink>; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China.; School of Materials Science and Engineering, Hunan University of Science and Technology, Xiangtan, China.<br /><searchLink fieldCode="AU" term="%22Ma+XL%22">Ma XL</searchLink>; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.; Institute of Physics, Chinese Academy of Sciences, Beijing, China.; Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, Guangdong, China.; Quantum Science Center of Guangdong-HongKong-Macau Greater Bay Area, Shenzhen, China.; State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Lanzhou, China. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%229885358%22">Advanced materials (Deerfield Beach, Fla.)</searchLink> [Adv Mater] 2026 Jun; Vol. 38 (32), pp. e22292. <i>Date of Electronic Publication: </i>2026 May 02. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Wiley-VCH%22">Wiley-VCH </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>9885358 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1521-4095 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2209359648%22">09359648 </searchLink><i>NLM ISO Abbreviation: </i>Adv Mater <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=42068198 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/adma.202522292 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: e22292 Titles: – TitleFull: Freestanding Flexible Vortex Tubes Integrated With Ferroelectric Transistor. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Gong FH – PersonEntity: Name: NameFull: Tang L – PersonEntity: Name: NameFull: Chen YT – PersonEntity: Name: NameFull: Zhu J – PersonEntity: Name: NameFull: Wang X – PersonEntity: Name: NameFull: Wang JH – PersonEntity: Name: NameFull: Yin SS – PersonEntity: Name: NameFull: Liu SZ – PersonEntity: Name: NameFull: Li XL – PersonEntity: Name: NameFull: Liu XR – PersonEntity: Name: NameFull: Wang YJ – PersonEntity: Name: NameFull: Tang YL – PersonEntity: Name: NameFull: Hong Z – PersonEntity: Name: NameFull: Liang QJ – PersonEntity: Name: NameFull: Zhu YL – PersonEntity: Name: NameFull: Ma XL IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: 2026 Jun Type: published Y: 2026 Identifiers: – Type: issn-electronic Value: 1521-4095 Numbering: – Type: volume Value: 38 – Type: issue Value: 32 Titles: – TitleFull: Advanced materials (Deerfield Beach, Fla.) Type: main |
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