Atomically confined insertion for 2D strain and polarization engineered GaN electronics.

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Title: Atomically confined insertion for 2D strain and polarization engineered GaN electronics.
Authors: Shi Y; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China.; Beijing Huairou Laboratory, Beijing, China., Dong Z; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China.; Beijing Huairou Laboratory, Beijing, China., Wang J; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China.; Beijing Huairou Laboratory, Beijing, China., Guo D; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China., Li W; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China., Sha W; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China.; Beijing Huairou Laboratory, Beijing, China., Li Z; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China.; Beijing Huairou Laboratory, Beijing, China., Yang Z; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China.; Beijing Huairou Laboratory, Beijing, China., Zhang J; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China.; Beijing Huairou Laboratory, Beijing, China., Liu J; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China.; Beijing Huairou Laboratory, Beijing, China., Xu T; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China.; Beijing Huairou Laboratory, Beijing, China., Hu W; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China. huweiguo@binn.cas.cn.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China. huweiguo@binn.cas.cn.; Beijing Huairou Laboratory, Beijing, China. huweiguo@binn.cas.cn., Wang ZL; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China. zlwang@binn.cas.cn.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China. zlwang@binn.cas.cn., Zhai J; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China. zhaijunyi@binn.cas.cn.; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, China. zhaijunyi@binn.cas.cn.; Beijing Huairou Laboratory, Beijing, China. zhaijunyi@binn.cas.cn.
Source: Nature communications [Nat Commun] 2026 Jun 11. Date of Electronic Publication: 2026 Jun 11.
Publication Type: Journal Article
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:2041-1723
DOI:10.1038/s41467-026-74233-3