InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit.

Saved in:
Bibliographic Details
Title: InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit.
Authors: Dimroth, Frank, Witzigmann, Bernd, Åberg, Ingvar, Magnusson, Martin H., Siefer, Gerald, Fuss-Kailuweit, Peter, Wallentin, Jesper, Anttu, Nicklas, H. Q. Xu, Samuelson, Lars, Deppert, Knut, Borgström, Magnus T., Asoli, Damir, Huffman, Maria
Source: Science (pre-March 2025). 3/1/2013, Vol. 339 Issue 6123, p1057-1060. 4p.
Subjects: Electric properties of indium phosphide, Electric properties of nanowires, Efficiency of photovoltaic cells, Performance of photovoltaic cells, Optical resonance, Photovoltaic power generation, Band gaps, Mathematical models, Electromagnetic fields, Optoelectronic device design & construction
Abstract: The article describes the design of indium phosphide (InP) nanowire array photovoltaic cells, focusing on the role of nanowire segment length and diameter in solar cell performance and efficiency. Researchers found that the use of resonant light trapping produced sunlight conversion efficiencies greater than the limit of traditional ray optics. Topics include the band gap of InP materials, the evaluation of light absorption using three-dimensional (3D) electromagnetic optical modeling, and the reproducibility and scalability of the design for optoelectronic devices.
Database: Psychology and Behavioral Sciences Collection
Description
Abstract:The article describes the design of indium phosphide (InP) nanowire array photovoltaic cells, focusing on the role of nanowire segment length and diameter in solar cell performance and efficiency. Researchers found that the use of resonant light trapping produced sunlight conversion efficiencies greater than the limit of traditional ray optics. Topics include the band gap of InP materials, the evaluation of light absorption using three-dimensional (3D) electromagnetic optical modeling, and the reproducibility and scalability of the design for optoelectronic devices.
ISSN:00368075
DOI:10.1126/science.1230969