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Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer.

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Title: Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer.
Authors: Du, Fangzhou1, Jiang, Yang1, Qiao, Zepeng1, Wu, Zhanxia2, Tang, Chuying1, He, Jiaqi1, Zhou, Guangnan1, Cheng, Wei-Chih1, Tang, Xinyi1, Wang, Qing1,3,4, wangq7@sustech.edu.cn, Yu, Hongyu1,3,4, yuhy@sustech.edu.cn
Source: Materials Science in Semiconductor Processing; Jun2022, Vol. 143, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 155662110
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer.
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  Data: <searchLink fieldCode="AU" term="%22Du%2C+Fangzhou%22">Du, Fangzhou</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Jiang%2C+Yang%22">Jiang, Yang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Qiao%2C+Zepeng%22">Qiao, Zepeng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wu%2C+Zhanxia%22">Wu, Zhanxia</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Tang%2C+Chuying%22">Tang, Chuying</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22He%2C+Jiaqi%22">He, Jiaqi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhou%2C+Guangnan%22">Zhou, Guangnan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Cheng%2C+Wei-Chih%22">Cheng, Wei-Chih</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tang%2C+Xinyi%22">Tang, Xinyi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Qing%22">Wang, Qing</searchLink><relatesTo>1,3,4</relatesTo>, <i>wangq7@sustech.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Yu%2C+Hongyu%22">Yu, Hongyu</searchLink><relatesTo>1,3,4</relatesTo>, <i>yuhy@sustech.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>; Jun2022, Vol. 143, pN.PAG-N.PAG, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=155662110
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.mssp.2022.106544
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      – Code: eng
        Text: English
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      – TitleFull: Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer.
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            NameFull: Jiang, Yang
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            – D: 01
              M: 06
              Text: Jun2022
              Type: published
              Y: 2022
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              Value: 143
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