Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications.
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| Title: | Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications. |
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| Authors: | Chang, Sung‐Jae1, sjchang@etri.re.kr, Jeong, Hyeon‐Seok2, Jung, Hyun‐Wook1, Choi, Su‐Min2, Choi, Il‐Gyu1, Noh, Youn‐Sub1, Kim, Seong‐Il1, Lee, Sang‐Heung1, Ahn, Ho‐Kyun1, Kang, Dong Min1, Kim, Dae‐Hyun2, Lim, Jong‐Won1 |
| Source: | ETRI Journal; Dec2024, Vol. 46 Issue 6, p1090-1102, 13p |
| Database: | Applied Science & Technology Source |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 181663718 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Chang%2C+Sung‐Jae%22">Chang, Sung‐Jae</searchLink><relatesTo>1</relatesTo>, <i>sjchang@etri.re.kr</i><br /><searchLink fieldCode="AU" term="%22Jeong%2C+Hyeon‐Seok%22">Jeong, Hyeon‐Seok</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Jung%2C+Hyun‐Wook%22">Jung, Hyun‐Wook</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Choi%2C+Su‐Min%22">Choi, Su‐Min</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Choi%2C+Il‐Gyu%22">Choi, Il‐Gyu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Noh%2C+Youn‐Sub%22">Noh, Youn‐Sub</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kim%2C+Seong‐Il%22">Kim, Seong‐Il</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lee%2C+Sang‐Heung%22">Lee, Sang‐Heung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ahn%2C+Ho‐Kyun%22">Ahn, Ho‐Kyun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kang%2C+Dong+Min%22">Kang, Dong Min</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kim%2C+Dae‐Hyun%22">Kim, Dae‐Hyun</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Lim%2C+Jong‐Won%22">Lim, Jong‐Won</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22ETRI+Journal%22">ETRI Journal</searchLink>; Dec2024, Vol. 46 Issue 6, p1090-1102, 13p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=181663718 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.4218/etrij.2023-0250 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 13 StartPage: 1090 Titles: – TitleFull: Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chang, Sung‐Jae – PersonEntity: Name: NameFull: Jeong, Hyeon‐Seok – PersonEntity: Name: NameFull: Jung, Hyun‐Wook – PersonEntity: Name: NameFull: Choi, Su‐Min – PersonEntity: Name: NameFull: Choi, Il‐Gyu – PersonEntity: Name: NameFull: Noh, Youn‐Sub – PersonEntity: Name: NameFull: Kim, Seong‐Il – PersonEntity: Name: NameFull: Lee, Sang‐Heung – PersonEntity: Name: NameFull: Ahn, Ho‐Kyun – PersonEntity: Name: NameFull: Kang, Dong Min – PersonEntity: Name: NameFull: Kim, Dae‐Hyun – PersonEntity: Name: NameFull: Lim, Jong‐Won IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 12256463 Numbering: – Type: volume Value: 46 – Type: issue Value: 6 Titles: – TitleFull: ETRI Journal Type: main |
| ResultId | 1 |