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Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing.

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Title: Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing.
Authors: Xiao, Ming1,2, xiaom37@mail.sysu.edu.cn, Hellenbrand, Markus1, mkhh2@cam.ac.uk, Strkalj, Nives1,3, Bakhit, Babak1,4,5, Sun, Zhuotong1, Barmpatsalos, Nikolaos6, Joksas, Dovydas6, Dou, Hongyi7, Hu, Zedong7, Lu, Ping8, Karki, Samip9, Kunwar, Sundar9, Major, Jonathan D.10, Chen, Aiping9, Wang, Haiyan7, Jia, Quanxi11, Mehonic, Adnan6, MacManus‐Driscoll, Judith L.1, jld35@cam.ac.uk
Source: Advanced Functional Materials; 7/17/2025, Vol. 35 Issue 29, p1-15, 15p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 186773706
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Functional+Materials%22">Advanced Functional Materials</searchLink>; 7/17/2025, Vol. 35 Issue 29, p1-15, 15p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=186773706
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