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Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers.

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Bibliographic Details
Title: Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers.
Authors: Nakashima, S., Katayama, T., Miyamura, Y.
Source: Journal of the Electrochemical Society; January 1996, Vol. 143, p244-251, 8p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500256338
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers.
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  Data: <searchLink fieldCode="AU" term="%22Nakashima%2C+S%2E%22">Nakashima, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Katayama%2C+T%2E%22">Katayama, T.</searchLink><br /><searchLink fieldCode="AU" term="%22Miyamura%2C+Y%2E%22">Miyamura, Y.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+the+Electrochemical+Society%22">Journal of the Electrochemical Society</searchLink>; January 1996, Vol. 143, p244-251, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500256338
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1149/1.1836416
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 8
        StartPage: 244
    Titles:
      – TitleFull: Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers.
        Type: main
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          Name:
            NameFull: Nakashima, S.
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            NameFull: Katayama, T.
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            NameFull: Miyamura, Y.
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            – D: 01
              M: 01
              Text: January 1996
              Type: published
              Y: 1996
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              Value: 00134651
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              Value: 143
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            – TitleFull: Journal of the Electrochemical Society
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