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Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors.

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Bibliographic Details
Title: Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors.
Authors: Alam, K., Zaman, S., Chowdhury, M. M.
Source: Journal of Applied Physics; July 15 2002, Vol. 92 Issue 2, p937-943, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500899731
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors.
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  Data: <searchLink fieldCode="AU" term="%22Alam%2C+K%2E%22">Alam, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Zaman%2C+S%2E%22">Zaman, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Chowdhury%2C+M%2E+M%2E%22">Chowdhury, M. M.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; July 15 2002, Vol. 92 Issue 2, p937-943, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500899731
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1486022
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 7
        StartPage: 937
    Titles:
      – TitleFull: Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors.
        Type: main
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            NameFull: Alam, K.
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            NameFull: Zaman, S.
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            NameFull: Chowdhury, M. M.
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            – D: 15
              M: 07
              Text: July 15 2002
              Type: published
              Y: 2002
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              Value: 92
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            – TitleFull: Journal of Applied Physics
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