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Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers.

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Bibliographic Details
Title: Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers.
Authors: Yang, Xuelin, Arita, Munetaka, Kako, Satoshi
Source: Applied Physics Letters; August 8 2011, Vol. 99 Issue 6, p061914-061914, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 502047702
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Label: Title
  Group: Ti
  Data: Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers.
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  Label: Authors
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  Data: <searchLink fieldCode="AU" term="%22Yang%2C+Xuelin%22">Yang, Xuelin</searchLink><br /><searchLink fieldCode="AU" term="%22Arita%2C+Munetaka%22">Arita, Munetaka</searchLink><br /><searchLink fieldCode="AU" term="%22Kako%2C+Satoshi%22">Kako, Satoshi</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; August 8 2011, Vol. 99 Issue 6, p061914-061914, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=502047702
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.3626589
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 1
        StartPage: 061914
    Titles:
      – TitleFull: Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Yang, Xuelin
      – PersonEntity:
          Name:
            NameFull: Arita, Munetaka
      – PersonEntity:
          Name:
            NameFull: Kako, Satoshi
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          Dates:
            – D: 08
              M: 08
              Text: August 8 2011
              Type: published
              Y: 2011
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              Value: 00036951
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              Value: 99
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              Value: 6
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            – TitleFull: Applied Physics Letters
              Type: main
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