LOW FREQUENCY NOISE SPECTROSCOPY: A POWERFUL DIAGNOSTIC TOOL FOR TRAP IDENTIFICATION IN ACTIVE AND PASSIVE COMPONENTS.

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Title: LOW FREQUENCY NOISE SPECTROSCOPY: A POWERFUL DIAGNOSTIC TOOL FOR TRAP IDENTIFICATION IN ACTIVE AND PASSIVE COMPONENTS.
Authors: Cretu, B.1 bogdan.cretu@ensicaen.fr, Tahiat, A.1, Germanicus, R. Coq1, Bezerra, F.2, Bunel, C.3, Veloso, A.4, Simoen, E.5
Source: Electronic Device Failure Analysis. Feb2025, Vol. 27 Issue 1, p8-17. 8p.
Subjects: Electron traps, Passive components, Silicon nanowires, Nanowires, Deep level transient spectroscopy, Noise
Abstract: The article focuses on low frequency noise spectroscopy as a powerful diagnostic tool for detecting and characterizing traps in active and passive semiconductor components. Topics include analyzing various noise contributions such as flicker, white, and generation-recombination noise, employing Arrhenius plots to determine trap energy levels and capture cross sections, and applying these methods to assess trap characteristics in advanced nanoscale transistor technologies.
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 182895117
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: LOW FREQUENCY NOISE SPECTROSCOPY: A POWERFUL DIAGNOSTIC TOOL FOR TRAP IDENTIFICATION IN ACTIVE AND PASSIVE COMPONENTS.
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  Data: <searchLink fieldCode="AR" term="%22Cretu%2C+B%2E%22">Cretu, B.</searchLink><relatesTo>1</relatesTo><i> bogdan.cretu@ensicaen.fr</i><br /><searchLink fieldCode="AR" term="%22Tahiat%2C+A%2E%22">Tahiat, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Germanicus%2C+R%2E+Coq%22">Germanicus, R. Coq</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bezerra%2C+F%2E%22">Bezerra, F.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Bunel%2C+C%2E%22">Bunel, C.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Veloso%2C+A%2E%22">Veloso, A.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Simoen%2C+E%2E%22">Simoen, E.</searchLink><relatesTo>5</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Electronic+Device+Failure+Analysis%22">Electronic Device Failure Analysis</searchLink>. Feb2025, Vol. 27 Issue 1, p8-17. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Electron+traps%22">Electron traps</searchLink><br /><searchLink fieldCode="DE" term="%22Passive+components%22">Passive components</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nanowires%22">Silicon nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Nanowires%22">Nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Deep+level+transient+spectroscopy%22">Deep level transient spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Noise%22">Noise</searchLink>
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  Data: The article focuses on low frequency noise spectroscopy as a powerful diagnostic tool for detecting and characterizing traps in active and passive semiconductor components. Topics include analyzing various noise contributions such as flicker, white, and generation-recombination noise, employing Arrhenius plots to determine trap energy levels and capture cross sections, and applying these methods to assess trap characteristics in advanced nanoscale transistor technologies.
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      – Type: doi
        Value: 10.31399/asm.edfa.2025-1.p008
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      – Code: eng
        Text: English
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        PageCount: 8
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    Subjects:
      – SubjectFull: Electron traps
        Type: general
      – SubjectFull: Passive components
        Type: general
      – SubjectFull: Silicon nanowires
        Type: general
      – SubjectFull: Nanowires
        Type: general
      – SubjectFull: Deep level transient spectroscopy
        Type: general
      – SubjectFull: Noise
        Type: general
    Titles:
      – TitleFull: LOW FREQUENCY NOISE SPECTROSCOPY: A POWERFUL DIAGNOSTIC TOOL FOR TRAP IDENTIFICATION IN ACTIVE AND PASSIVE COMPONENTS.
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            – D: 01
              M: 02
              Text: Feb2025
              Type: published
              Y: 2025
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