Large-Area Pulsed Laser Deposition Growth of Transparent Conductive Al-Doped ZnO Thin Films.
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| Title: | Large-Area Pulsed Laser Deposition Growth of Transparent Conductive Al-Doped ZnO Thin Films. |
|---|---|
| Authors: | Bancu, Elena Isabela1,2 (AUTHOR), Ion, Valentin1,2 (AUTHOR), Sopronyi, Mihai Adrian1,3 (AUTHOR), Antohe, Stefan1,2,3 (AUTHOR), Scarisoreanu, Nicu Doinel1,2 (AUTHOR) nicu.scarisoreanu@inflpr.ro |
| Source: | Nanomaterials (2079-4991). Nov2025, Vol. 15 Issue 22, p1722. 15p. |
| Subjects: | Pulsed laser deposition, Thin films, Morphology, Electric properties, Microfabrication, Zinc oxide films, Optical properties |
| Abstract: | High-quality AZO thin films were produced on a 4-inch Si substrate using large-area PLD equipment at a substrate temperature of 330 °C, with a ZnO: Al (98:2 wt.%) target. This study aims to enhance the electrical, optical, morphological and structural properties of large-area PLD-grown AZO thin films by tuning the deposition pressures. The samples were prepared under high-vacuum (HV) conditions, as well as in oxygen atmospheres of 0.005 mbar O2, 0.01 mbar O2, and 0.1 mbar O2. Consequently, a bilayer AZO film was prepared in a combination of two deposition pressures (first layer prepared under HV, followed by the second layer prepared at 0.01 mbar O2). Additionally, morphological and structural characterization revealed that high-quality columnar growth AZO thin films free of droplets, with a strong (002) orientation, were achieved on a 4-inch Si substrate. Moreover, Hall measurements in the Van der Pauw configuration were used to assess the electrical properties. A low electrical resistivity of 3.98 × 10−4 Ω cm, combined with a high carrier concentration (n) of 1.05 × 1021 cm−3 and a charge carrier mobility of 17.9 cm2/V s, was achieved at room temperature for the sample prepared under HV conditions. The optical characterization conducted through spectroscopic ellipsometry measurements showed that the large-area AZO sample exhibits an increased optical transparency in the visible (VIS) range with a near-zero extinction coefficient (k) and a wide bandgap of 3.75 eV, fulfilling the standards for materials classified as TCO. In addition, the increased thickness uniformity of the prepared AZO films over a large area represents a significant step in scaling the PLD technique for industrial applications. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Items | – Name: Title Label: Title Group: Ti Data: Large-Area Pulsed Laser Deposition Growth of Transparent Conductive Al-Doped ZnO Thin Films. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Bancu%2C+Elena+Isabela%22">Bancu, Elena Isabela</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ion%2C+Valentin%22">Ion, Valentin</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sopronyi%2C+Mihai+Adrian%22">Sopronyi, Mihai Adrian</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Antohe%2C+Stefan%22">Antohe, Stefan</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Scarisoreanu%2C+Nicu+Doinel%22">Scarisoreanu, Nicu Doinel</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> nicu.scarisoreanu@inflpr.ro</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Nov2025, Vol. 15 Issue 22, p1722. 15p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Pulsed+laser+deposition%22">Pulsed laser deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Morphology%22">Morphology</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+properties%22">Electric properties</searchLink><br /><searchLink fieldCode="DE" term="%22Microfabrication%22">Microfabrication</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide+films%22">Zinc oxide films</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: High-quality AZO thin films were produced on a 4-inch Si substrate using large-area PLD equipment at a substrate temperature of 330 °C, with a ZnO: Al (98:2 wt.%) target. This study aims to enhance the electrical, optical, morphological and structural properties of large-area PLD-grown AZO thin films by tuning the deposition pressures. The samples were prepared under high-vacuum (HV) conditions, as well as in oxygen atmospheres of 0.005 mbar O2, 0.01 mbar O2, and 0.1 mbar O2. Consequently, a bilayer AZO film was prepared in a combination of two deposition pressures (first layer prepared under HV, followed by the second layer prepared at 0.01 mbar O2). Additionally, morphological and structural characterization revealed that high-quality columnar growth AZO thin films free of droplets, with a strong (002) orientation, were achieved on a 4-inch Si substrate. Moreover, Hall measurements in the Van der Pauw configuration were used to assess the electrical properties. A low electrical resistivity of 3.98 × 10−4 Ω cm, combined with a high carrier concentration (n) of 1.05 × 1021 cm−3 and a charge carrier mobility of 17.9 cm2/V s, was achieved at room temperature for the sample prepared under HV conditions. The optical characterization conducted through spectroscopic ellipsometry measurements showed that the large-area AZO sample exhibits an increased optical transparency in the visible (VIS) range with a near-zero extinction coefficient (k) and a wide bandgap of 3.75 eV, fulfilling the standards for materials classified as TCO. In addition, the increased thickness uniformity of the prepared AZO films over a large area represents a significant step in scaling the PLD technique for industrial applications. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano15221722 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 15 StartPage: 1722 Subjects: – SubjectFull: Pulsed laser deposition Type: general – SubjectFull: Thin films Type: general – SubjectFull: Morphology Type: general – SubjectFull: Electric properties Type: general – SubjectFull: Microfabrication Type: general – SubjectFull: Zinc oxide films Type: general – SubjectFull: Optical properties Type: general Titles: – TitleFull: Large-Area Pulsed Laser Deposition Growth of Transparent Conductive Al-Doped ZnO Thin Films. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Bancu, Elena Isabela – PersonEntity: Name: NameFull: Ion, Valentin – PersonEntity: Name: NameFull: Sopronyi, Mihai Adrian – PersonEntity: Name: NameFull: Antohe, Stefan – PersonEntity: Name: NameFull: Scarisoreanu, Nicu Doinel IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 11 Text: Nov2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 15 – Type: issue Value: 22 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
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