Optical and excitonic properties of ZnO films

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Title: Optical and excitonic properties of ZnO films
Authors: Mihailovic, M.1 Martine.MIHAILOVIC@univ-bpclermont.fr, Henneghien, A.-L.1, Faure, S.2, Disseix, P.1, Leymarie, J.1, Vasson, A.1, Buell, D.A.3, Semond, F.3, Morhain, C.3, Zùñiga Pérez, J.3
Source: Optical Materials. Jan2009, Vol. 31 Issue 3, p532-536. 5p.
Subjects: Optical properties, Thin films, Electric properties of thin films, Zinc oxide thin films, Gallium nitride, Ellipsometry, Molecular beam epitaxy, Substrates (Materials science), Dielectrics
Abstract: Abstract: Optical and excitonic properties of ZnO heterostructures are studied in order to observe the strong light-matter coupling in this material as it has been recently demonstrated in GaN. The optical index of ZnO is first studied as a function of wavelength through spectroscopic ellipsometric and reflectivity experiments on ZnO layers grown by molecular beam epitaxy and deposited on two different substrates: sapphire and silicon with an AlN buffer layer. The main features of the excitons: energy, oscillator strength and broadening are deduced. From the knowledge of these properties, a microcavity is then designed. The ZnO active layer is embedded between AlGaN/AlN and dielectric Bragg mirrors. The calculation of the reflectivity spectra as a function of the incident angle attests the strong coupling and a large Rabi splitting of 110meV is expected in such a cavity. [Copyright &y& Elsevier]
Copyright of Optical Materials is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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An: 35658300
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  Data: Optical and excitonic properties of ZnO films
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  Data: <searchLink fieldCode="AR" term="%22Mihailovic%2C+M%2E%22">Mihailovic, M.</searchLink><relatesTo>1</relatesTo><i> Martine.MIHAILOVIC@univ-bpclermont.fr</i><br /><searchLink fieldCode="AR" term="%22Henneghien%2C+A%2E-L%2E%22">Henneghien, A.-L.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Faure%2C+S%2E%22">Faure, S.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Disseix%2C+P%2E%22">Disseix, P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Leymarie%2C+J%2E%22">Leymarie, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Vasson%2C+A%2E%22">Vasson, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Buell%2C+D%2EA%2E%22">Buell, D.A.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Semond%2C+F%2E%22">Semond, F.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Morhain%2C+C%2E%22">Morhain, C.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Zùñiga+Pérez%2C+J%2E%22">Zùñiga Pérez, J.</searchLink><relatesTo>3</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Optical+Materials%22">Optical Materials</searchLink>. Jan2009, Vol. 31 Issue 3, p532-536. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+properties+of+thin+films%22">Electric properties of thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide+thin+films%22">Zinc oxide thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+nitride%22">Gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Ellipsometry%22">Ellipsometry</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectrics%22">Dielectrics</searchLink>
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  Label: Abstract
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  Data: Abstract: Optical and excitonic properties of ZnO heterostructures are studied in order to observe the strong light-matter coupling in this material as it has been recently demonstrated in GaN. The optical index of ZnO is first studied as a function of wavelength through spectroscopic ellipsometric and reflectivity experiments on ZnO layers grown by molecular beam epitaxy and deposited on two different substrates: sapphire and silicon with an AlN buffer layer. The main features of the excitons: energy, oscillator strength and broadening are deduced. From the knowledge of these properties, a microcavity is then designed. The ZnO active layer is embedded between AlGaN/AlN and dielectric Bragg mirrors. The calculation of the reflectivity spectra as a function of the incident angle attests the strong coupling and a large Rabi splitting of 110meV is expected in such a cavity. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Optical Materials is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.optmat.2007.10.023
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 532
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      – SubjectFull: Optical properties
        Type: general
      – SubjectFull: Thin films
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      – SubjectFull: Electric properties of thin films
        Type: general
      – SubjectFull: Zinc oxide thin films
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      – SubjectFull: Gallium nitride
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      – SubjectFull: Molecular beam epitaxy
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      – SubjectFull: Substrates (Materials science)
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      – SubjectFull: Dielectrics
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              Text: Jan2009
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